Principal Design Engineer

Work Setting: Onsite – Fremont, CA

Compensation: $150,000 - $202,000 base salary with a 16% target annual bonus

Benefits: Comprehensive medical, dental, vision, 401(k), annual bonus, relocation assistance, and comprehensive employee benefits package

Work Authorization: Qualified candidates requiring a TN-1 visa or H-1B transfer are encouraged to apply. New H-1B sponsorship is not available for this opportunity.

Position Summary

A global leader in optical communications technology is seeking a Principal Design Engineer to lead the design and development of next-generation high-speed InGaAs/Indium Phosphide (InP) photodiodes used in advanced optical communication and sensing applications.

This is a highly technical individual contributor role focused on photodiode architecture, device simulation, wafer process development, characterization, and product qualification. Working alongside world-class engineers, you'll drive innovation from concept through production while helping develop the next generation of optoelectronic devices that power AI infrastructure, high-speed networking, and advanced photonic technologies.

The ideal candidate combines deep technical expertise with a passion for innovation and enjoys solving complex semiconductor design challenges in a collaborative R&D environment.

Key Responsibilities

• Lead the design and development of high-speed, high-sensitivity InGaAs/InP photodiodes from concept through production

• Define device architectures and performance targets to meet customer and market requirements

• Partner with epitaxial growth, process integration, and wafer fabrication teams to optimize device structures and manufacturing processes

• Perform device simulation, characterization, and failure analysis to improve speed, sensitivity, reliability, and manufacturability

• Support product qualification, reliability testing, and new product introduction activities

• Collaborate with product engineering teams on yield improvement and continuous process optimization

• Mentor engineers and provide technical leadership across multidisciplinary development teams

• Stay current on emerging photonic technologies and identify opportunities for future product innovation

Required Qualifications

• Ph.D. in Electrical Engineering, Physics, Materials Science, or a related discipline

• 10+ years of experience designing InP or GaAs photodiodes

• Strong background in optoelectronic device simulation and design

• Experience with InP or GaAs wafer processing and semiconductor fabrication

• Hands-on experience with photodiode characterization, reliability testing, and product qualification

• Strong understanding of semiconductor device physics and optoelectronic materials

• Excellent analytical, troubleshooting, and cross-functional communication skills

• Ability to lead technical projects from concept through production

Preferred Qualifications

• Experience designing other InP optoelectronic devices such as laser diodes

• Experience supporting semiconductor process integration and yield improvement initiatives

• Background working with contract manufacturing partners

• Experience performing device failure analysis and reliability investigations

• Previous technical leadership or mentoring experience

• Experience developing products for optical communications or photonics applications

Why This Opportunity

• Opportunity to lead the development of next-generation photodiode technology

• Work alongside globally recognized experts in photonics and semiconductor device engineering

• Join a growing business with significant investment in advanced optical technologies

• Highly visible technical leadership role with opportunities to influence future product direction

• Potential path into engineering management or broader technical leadership

• Collaborative culture that encourages innovation, ownership, and continuous learning

• Relocation assistance and a competitive compensation package including annual bonus