RF Discrete Design Engineer- RTP

Principal RF Discrete Design Engineer

Job Description

The Power & GaN Technology Group is responsible for the design and production of RF Power Transistor and Amplifier Modules. We are currently looking for a Principal RF Design Engineer working in our design center located in Morrisville, NC (RTP area) reporting to the Engineering lead.

A Principal Design Engineer will be responsible for developing RF Amplifier Transistors, MMIC, and Hybrid Modules in GaN technology, from conceptual to production release phases, according to MACOM's New Product Development procedures. This includes:

• Participating to product definition, in order to asses feasibility and define target specifications.
• Executing schematic circuit simulations and EM simulations.
• Designing test circuits for evaluation and production testing.
• Generating layouts and assembly drawings.
• Device characterization and modeling.
• Maintaining a fully equipped test bench.
• Delivering fully characterized prototype samples (RF, thermal). Material procurement for prototypes.
• Generating design reports, progress reports, test reports, datasheets and bill of materials.
• Organizing design reviews.
• Cooperating with Project Manager in order to maintain an up-to-date project plan and schedule.
• Cooperating with Packaging & Assembly team to ensure compliance to manufacturing design rules and to develop cost effective solutions that lead to high production yields.
• Cooperating with Product Engineering team for production release.
• Keeping up to date with latest technologies (semiconductor, assembly, packaging, tools).
• Customer support (sampling and application notes).
• Coaching and mentoring of more junior engineers.