Senior Power FET Development Engineer

onsemi is seeking a Power Device Engineer (MTS/SMTS Engineer in our Hopewell Junction, NY, site to join our Power Technology Development team and lead the advancement of innovative discrete power MOSFET and FET technologies. This is a highly visible technical role offering the opportunity to influence technology strategy, drive product innovation, and work alongside some of the industry''s leading device experts.

onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world's most complex challenges and leads the way in creating a safer, cleaner, and smarter world.

More details about our company benefits can be found here:

https://www.onsemi.com/careers/career-benefits

Qualifications:

• BS, MS, or PhD in Electrical Engineering, Physics, Materials Science, or a related technical field.

• Experience developing semiconductor devices, with emphasis on:

• Power MOSFETs

• Trench MOSFETs

• Super Junction devices

• Other discrete power technologies

• Strong understanding of:

• Semiconductor device physics

• Device reliability

• Semiconductor manufacturing processes

• Experience moving new technologies from development through qualification and volume production.

• Knowledge of wafer fabrication, wafer probe, electrical characterization, and device testing.

• Experience with data-driven problem solving and statistical analysis techniques.

• Ability to independently drive technical projects and influence cross-functional teams.

• Strong written and verbal communication skills.

Preferred Skills

High-voltage and high-current power device development.

300mm semiconductor manufacturing environments.

TCAD, SPICE, electro-thermal, or compact modeling tools.

Wafer-level test, WAT, PCM, probe, and final test methodologies.

Packaging technologies for discrete power devices, including:

• DFN
• TO packages
• Copper clip packages
• Power modules

AEC-Q101 automotive qualification and reliability testing.

SiC and GaN power semiconductor technologies.

Statistical analysis tools such as JMP, Python, or MATLAB.

Patent development and technology innovation experience.

Salary: onsemi is excited to share the base salary range for this position is $147,000 to $250,000 exclusive of fringe benefits or potential bonuses. The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package. https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf

Responsibilities:

As a key contributor to our technology development team, you will:

• Lead the development of next-generation discrete power MOSFET technologies from concept through qualification and production ramp.

• Define device architectures and electrical performance targets focused on improving:

• RDS(on)

• Switching efficiency

• Power density

• Ruggedness and reliability

• Drive device simulation, modeling, characterization, and silicon validation activities.

• Collaborate closely with process integration, manufacturing, product engineering, packaging, reliability, and applications teams to deliver innovative power device solutions.

• Analyze electrical data, yield trends, and reliability results to identify opportunities for performance improvement.

• Solve challenging device and process integration issues using data-driven methodologies, including DOE, SPC, FMEA, and Six Sigma techniques.

• Partner with fabrication teams to optimize process windows and ensure robust manufacturability.

• Support technology roadmaps and evaluate emerging device concepts in power MOSFET, Super Junction, SiC, and GaN technologies.

• Contribute to patents, invention disclosures, and technical publications that expand onsemi''s technology leadership.

• Mentor engineers, provide technical leadership, and help grow the next generation of power semiconductor innovators.

Responsibilities:

As a key contributor to our technology development team, you will:

• Lead the development of next-generation discrete power MOSFET technologies from concept through qualification and production ramp.

• Define device architectures and electrical performance targets focused on improving:

• RDS(on)

• Switching efficiency

• Power density

• Ruggedness and reliability

• Drive device simulation, modeling, characterization, and silicon validation activities.

• Collaborate closely with process integration, manufacturing, product engineering, packaging, reliability, and applications teams to deliver innovative power device solutions.

• Analyze electrical data, yield trends, and reliability results to identify opportunities for performance improvement.

• Solve challenging device and process integration issues using data-driven methodologies, including DOE, SPC, FMEA, and Six Sigma techniques.

• Partner with fabrication teams to optimize process windows and ensure robust manufacturability.

• Support technology roadmaps and evaluate emerging device concepts in power MOSFET, Super Junction, SiC, and GaN technologies.

• Contribute to patents, invention disclosures, and technical publications that expand onsemi''s technology leadership.

• Mentor engineers, provide technical leadership, and help grow the next generation of power semiconductor innovators.