Mocvd Gan Process Development Engineer

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Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping about 100,000 customers transform the future, today. We're committed to building a better future - from the responsible manufacturing of our semiconductors, to caring for our employees, to giving back inside our communities and developing great minds. Put your talent to work with us - change the world, love your job!

About the Job: A GaN Process Development Engineer is responsible for direct hands-on development of GaN unit processes and loop integration to support volume production of power electronics products as part of the Advanced Technology Development group. The ideal candidate should have prior demonstrated hands-on development and manufacturing experience in MOCVD GaN epi growth and semiconductor unit processes with a strong foundational knowledge of materials and devices.

Responsibilities include:

• Development of robust, low cost, manufacturable GaN unit processes and integration of such unit processes in support of GaN technology products
• Direct hands-on process development in the fab from conception to qualification including unit process definition/ requirements for MOCVD GaN epitaxy, recipe development, materials/process characterization, metrology requirements and process control setup, operational and manufacturing specifications/documents, coordination of factory automation setup, and training materials creation
• Development of process flow/integration requirements and specifications as required to meet electrical and process requirements
• Design of experiments and statistical analysis of data
• Direct engagement with material and equipment suppliers
• Keeping up with latest understanding of wide-band gap materials fundamentals and improvements and ensuring competitiveness
• Correlation/analysis of Device output electrical data to process/material input data and understanding to drive device performance/reliability and robustness improvements
• Analysis and correlation of Process/Metrology output data to Equipment/Tool input data and understanding to drive manufacturability, cost, and robustness improvements
• Matching performance between process tools and chambers running the same process recipe
• Work with multiple equipment, process, integration, component, reliability, and Test & Product engineers to achieve these goals. The person performing this role must be capable of planning effectively, drive schedules, meet critical deadlines on multiple tasks in parallel, lead technical discussions in their area of expertise, and work effectively across organizational boundaries. They must be able to clearly communicate project status and actions. Additionally, they must be able to interface with multiple organizations and work well on a diverse team to accomplish goals

Minimum requirements:

• Masters in Chemical Engineering, Materials Science, Chemistry, Physics or Electrical Engineering
• 3 years of experience with MOCVD GaN epitaxy growth and related Semiconductor Materials and Characterization/analysis
• Knowledge of Semiconductor unit process development and loop integration
• Knowledge/understanding of Semiconductor Manufacturing and Processes
• Knowledge of GaN/Semiconductor Device physics
• Strong knowledge of SPC methodology for process control and monitoring
• Strong problem partitioning skills to resolve process and equipment issues
• Demonstrated strong data analytics and problem-solving skills including knowledge/understanding of statistical design of experiments and analysis of large data sets

Preferred qualifications:

• PhD in Chemical Engineering, Materials Science, Chemistry, Physics or Electrical Engineering
• Knowledge of III-V HEMT Device physics, materials, and processing
• Knowledge of Machine Learning and AI use is a plus
• Experience in growing GaN epi for Power HEMTS and/or RF GaN
• Strong verbal and written communication skills
• Ability to work in teams and collaborate effectively with key stakeholders
• Strong time management skills that enable on-time project/milestone delivery
• Demonstrated ability to build strong, influential relationships
• Ability to work effectively in a fast-paced, rapidly changing environment and able to quickly adjust to milestone/priority changes
• Ability to take the initiative and drive for results

Minimum requirements:

• Masters in Chemical Engineering, Materials Science, Chemistry, Physics or Electrical Engineering
• 3 years of experience with MOCVD GaN epitaxy growth and related Semiconductor Materials and Characterization/analysis
• Knowledge of Semiconductor unit process development and loop integration
• Knowledge/understanding of Semiconductor Manufacturing and Processes
• Knowledge of GaN/Semiconductor Device physics
• Strong knowledge of SPC methodology for process control and monitoring
• Strong problem partitioning skills to resolve process and equipment issues
• Demonstrated strong data analytics and problem-solving skills including knowledge/understanding of statistical design of experiments and analysis of large data sets

Preferred qualifications:

• PhD in Chemical Engineering, Materials Science, Chemistry, Physics or Electrical Engineering
• Knowledge of III-V HEMT Device physics, materials, and processing
• Knowledge of Machine Learning and AI use is a plus
• Experience in growing GaN epi for Power HEMTS and/or RF GaN
• Strong verbal and written communication skills
• Ability to work in teams and collaborate effectively with key stakeholders
• Strong time management skills that enable on-time project/milestone delivery
• Demonstrated ability to build strong, influential relationships
• Ability to work effectively in a fast-paced, rapidly changing environment and able to quickly adjust to milestone/priority changes
• Ability to take the initiative and drive for results