MTS - Microelectronics/Semiconductor Engineering) to support the investigation of radiation effects, reliability- and radiation-hardness-by-design, and physics of failure of advanced CMOS, SiGe, SOI, III-V, II-VI, GaN, GaAs, MoS2 and other transition metal dichalcogenides, and other advanced technology for space applications. MTD is comprised of two sections: one that performs radiation effects testing and discrete microelectronics testing, while the other section performs failure analysis on microelectronics using tools that can identify anomalies from the macroscopic down to the atomic scale.