BS + 8-10 years of experience or MS +7 years or PhD + 5 years Years of Experience: 5+ years in semiconductor processing Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development Experience with Cadence or any other layout and simulation tool Strong data analysis skills Fluency in English Language - written & verbal Ability to relocate to Essex Junction, VT Preferred Qualifications: 8+ Years of Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development Experience of leading a device or process development project TCAD experience Experience in RF device design and characterization including high frequency design, measurement and analysis Excellent interpersonal skills, energetic, motivated, and self-driven Demonstrate ability to work well within a global matrixed team or environment with minimal supervision Outstanding communication skills - both written and verbal Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs Demonstrated ability to meet deadlines and commitments Expected Salary Range $118,000.00 - $210,000.00 The exact Salary will be determined based on qualifications, experience and location. The position leads design‑of‑experiments (DOE), drives root‑cause problem solving, and collaborates closely with process, characterization, and failure analysis teams to improve device performance and manufacturing robustness.