The successful candidate will work on cutting-edge research projects focused on ultrawide bandgap materials (e.g., diamond, III-nitrides, and GaO), advancing next-generation electronic devices through innovations in thin film epitaxy, doping, interface engineering, and laser-based processing to achieve superior performance, thermal management, and energy efficiency in high-power and high-frequency applications. Our research integrates advanced thin-film growth, laser-based processing, doping strategies, and interface engineering to enable energy-efficient, radiation-hardened, and thermally robust electronic systems, with applications spanning power electronics, space systems, and national defense technologies.