Develop and qualify diffusion, oxidation, and rapid thermal annealing (RTA/RTP) processes at 2nm and beyond, including dopant diffusion, junction formation, source/drain activation, channel doping, well implants, oxidation, and high-temperature anneals. The engineer will develop and optimize dopant diffusion, oxidation, annealing, and related thermal processes while balancing junction profiles, dopant activation, thermal budgets, defectivity, and integration constraints across radically different product requirements.