The Division has made a wide range of important contributions during the Laboratory's 70+ year history, including development of bulk and epitaxial crystal growth, charge-coupled device (CCD) imagers, 193-nm lithography, fully depleted silicon-on-insulator (FDSOI) CMOS electronics, semiconductor diode lasers and amplifiers, superconducting electronics and quantum bit (qubit) devices, and photonic integrated circuits (PICs). These in-house resources are used to fabricate a variety of devices and circuits including lasers, waveguide photodetectors, optical modulators, and CMOS and cryogenic electronics with applications in quantum computing, atomic systems, advanced laser sources, microwave photonics, communications, sensing, and other areas of interest to the U.S. Government, industry, and academia.